数学物理学报(英文版) ›› 2023, Vol. 43 ›› Issue (2): 975-980.doi: 10.1007/s10473-023-0226-0

• • 上一篇    

GLOBAL SOLUTIONS TO A HYDRODYNAMIC MODEL FOR SEMICONDUCTORS WITH VELOCITY RELAXATION*

Xianting Wang1, Yun-guang Lu2, Richard De la cruz3, Guoqiao You4,†   

  1. 1. Department of Mathematics, Wuxi Institute of Technology, Wuxi 214121, China;
    2. School of Mathematics, Hangzhou Normal University, Hangzhou 311121, China;
    3. Escuela de Matematicas y Estadistica, Universidad Pedagógica y Tecnológica de Colombia 999076, Colombia;
    4. School of Mathematics, Nanjing Audit University, Nanjing 210000, China
  • 收稿日期:2022-07-27 修回日期:2022-10-19 出版日期:2023-03-25 发布日期:2023-04-12
  • 通讯作者: †Guoqiao You, Email: magqyou@nau.edu.cn.
  • 作者简介:Xianting Wang, Email: wangxt@wxit.edu.cn; Yun-guang Lu, Email: ylu2005@ustc.edu.cn; Richard De la cruz, Email: richard.delacruz@uptc.edu.co
  • 基金资助:
    The first and the second authors were supported by Zhejiang Province NSFC (LY20A010023 and LY22A010015) and the NSFC (12071106) of China, and the fourth author was supported by the Natural Science Foundation of Jiangsu Province (BK20211293) and the "Qing-Lan Engineering" Foundation of Jiangsu Higher Education Institutions.

GLOBAL SOLUTIONS TO A HYDRODYNAMIC MODEL FOR SEMICONDUCTORS WITH VELOCITY RELAXATION*

Xianting Wang1, Yun-guang Lu2, Richard De la cruz3, Guoqiao You4,†   

  1. 1. Department of Mathematics, Wuxi Institute of Technology, Wuxi 214121, China;
    2. School of Mathematics, Hangzhou Normal University, Hangzhou 311121, China;
    3. Escuela de Matematicas y Estadistica, Universidad Pedagógica y Tecnológica de Colombia 999076, Colombia;
    4. School of Mathematics, Nanjing Audit University, Nanjing 210000, China
  • Received:2022-07-27 Revised:2022-10-19 Online:2023-03-25 Published:2023-04-12
  • Contact: †Guoqiao You, Email: magqyou@nau.edu.cn.
  • About author:Xianting Wang, Email: wangxt@wxit.edu.cn; Yun-guang Lu, Email: ylu2005@ustc.edu.cn; Richard De la cruz, Email: richard.delacruz@uptc.edu.co
  • Supported by:
    The first and the second authors were supported by Zhejiang Province NSFC (LY20A010023 and LY22A010015) and the NSFC (12071106) of China, and the fourth author was supported by the Natural Science Foundation of Jiangsu Province (BK20211293) and the "Qing-Lan Engineering" Foundation of Jiangsu Higher Education Institutions.

PDF (PC)

6

摘要： In this paper, we apply the method given in the paper "Zero relaxation time limits to a hydrodynamic model of two carrier types for semiconductors" (Mathematische Annalen, 2022, 382: 1031--1046) to study the Cauchy problem for a one dimensional inhomogeneous hydrodynamic model of two-carrier types for semiconductors with the velocity relaxation.

关键词: global $L^{\infty}$ solution, hydrodynamic model, two-carrier types, velocity relaxation

Abstract: In this paper, we apply the method given in the paper "Zero relaxation time limits to a hydrodynamic model of two carrier types for semiconductors" (Mathematische Annalen, 2022, 382: 1031--1046) to study the Cauchy problem for a one dimensional inhomogeneous hydrodynamic model of two-carrier types for semiconductors with the velocity relaxation.

Key words: global $L^{\infty}$ solution, hydrodynamic model, two-carrier types, velocity relaxation

版权所有 © 《数学物理学报(英文版)》杂志社
地址：武汉市71010号信箱(430071)　电话: 027-87199206(中文版)　027-87199087(英文版)
E-mail: actams@apm.ac.cn
本系统由北京玛格泰克科技发展有限公司设计开发