Abstract:

A one-dimensional stationary nonisentropic hydrodynamic model for semiconductor devices with non-constant lattice temperature is studied. This model consists of the equations for the electron density, the electron current
density and electron temperature, coupled with the Poisson equation of
the electrostatic potential in a bounded interval supplemented with proper boundary conditions. The existence and uniqueness of a strong subsonic steady-state solution with positive particle density and positive temperature is established. The proof is based on the fixed-point arguments, the Stampacchia truncation methods, and the basic energy estimates.

Key words: Steady-state, nonisentropic, hydrodynamic model, semiconductor, subsonic