Acta mathematica scientia,Series B ›› 2023, Vol. 43 ›› Issue (2): 975-980.doi: 10.1007/s10473-023-0226-0

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GLOBAL SOLUTIONS TO A HYDRODYNAMIC MODEL FOR SEMICONDUCTORS WITH VELOCITY RELAXATION*

Xianting Wang1, Yun-guang Lu2, Richard De la cruz3, Guoqiao You4,†   

  1. 1. Department of Mathematics, Wuxi Institute of Technology, Wuxi 214121, China;
    2. School of Mathematics, Hangzhou Normal University, Hangzhou 311121, China;
    3. Escuela de Matematicas y Estadistica, Universidad Pedagógica y Tecnológica de Colombia 999076, Colombia;
    4. School of Mathematics, Nanjing Audit University, Nanjing 210000, China
  • Received:2022-07-27 Revised:2022-10-19 Online:2023-03-25 Published:2023-04-12
  • Contact: †Guoqiao You, Email: magqyou@nau.edu.cn.
  • About author:Xianting Wang, Email: wangxt@wxit.edu.cn; Yun-guang Lu, Email: ylu2005@ustc.edu.cn; Richard De la cruz, Email: richard.delacruz@uptc.edu.co
  • Supported by:
    The first and the second authors were supported by Zhejiang Province NSFC (LY20A010023 and LY22A010015) and the NSFC (12071106) of China, and the fourth author was supported by the Natural Science Foundation of Jiangsu Province (BK20211293) and the "Qing-Lan Engineering" Foundation of Jiangsu Higher Education Institutions.

Abstract: In this paper, we apply the method given in the paper "Zero relaxation time limits to a hydrodynamic model of two carrier types for semiconductors" (Mathematische Annalen, 2022, 382: 1031--1046) to study the Cauchy problem for a one dimensional inhomogeneous hydrodynamic model of two-carrier types for semiconductors with the velocity relaxation.

Key words: global $L^{\infty}$ solution, hydrodynamic model, two-carrier types, velocity relaxation

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