Abstract: Results of computer simulation of the anodization and strip method of ion implantation profiling of silicon are given for the following eases:phosphor dosage from 10¹²/cm² to 10¹⁴/cm² and boron dosage from 10¹²/cm2 to 10¹³/cm². particular emphasis is placed on the effect of surface states and substrate PN junction on the stripping algorithm. When phosphor dosage below 10¹³/cm² or boron dosage below 10¹²/cm² is used, the profile obtained by the stripping method deviates significantly from the true profile. It is shown that attempt to estimate this deviation by the surface depletion width mar be erroneous.