Acta mathematica scientia,Series B ›› 2003, Vol. 23 ›› Issue (3): 386-.

• Articles • Previous Articles     Next Articles

IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

 CHEN Wei   

  1. Academy of Mathematics &|System science, CAS, Beijing 100080, China
    School of Economics, Shandong University, Jinan 250100, China
  • Online:2003-07-14 Published:2003-07-14
  • Supported by:

    This project was supported by China Postdoctoral
    Science Foundation

Abstract:

The transient behavior of a semiconductor device consists of a Poisson equa-
tion for the electric potential and of two nonlinear parabolic equations for the electron
density and hole density. The electric potential equation is discretized by a mixed finite
element method. The electron and hole density equations are treated by implicit-explicit
multistep finite element methods. The schemes are very efficient. The optimal order error
estimates both in time and space are derived.

Key words: Semiconductor device, strongly A(0)-stable, multistep methods, finite ele-ment methods, mixed finite element methods

CLC Number: 

  • 65M15
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