FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

数学物理学报(英文版) ›› 2005, Vol. 25 ›› Issue (3): 427-438.

FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

袁益让

Institute of Mathematics, Shandong University, Jinan 250100, China

出版日期:2005-07-20 发布日期:2005-07-20
基金资助:
. This work is supported by the Major State Basic
Research Program of China (19990328), the National Tackling Key Problem Program, the National Science
Foundation of China (10271066 and 0372052), and the Doctorate Foundation of the Ministry of Education of
China (20030422047).

FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

|Yuan-Yi-Rang

Online:2005-07-20 Published:2005-07-20
Supported by:
. This work is supported by the Major State Basic
Research Program of China (19990328), the National Tackling Key Problem Program, the National Science
Foundation of China (10271066 and 0372052), and the Doctorate Foundation of the Ministry of Education of
China (20030422047).

摘要/Abstract

摘要：

Characteristic finite difference fractional step schemes are put forward. The
electric potential equation is described by a seven-point finite difference scheme, and the
electron and hole concentration equations are treated by a kind of characteristic finite dif-
ference fractional step methods. The temperature equation is described by a fractional step
method. Thick and thin grids are made use of to form a complete set. Piecewise threefold
quadratic interpolation, symmetrical extension, calculus of variations, commutativity of
operator product, decomposition of high order difference operators and prior estimates are
also made use of. Optimal order estimates in l2 norm are derived to determine the error of
the approximate solution. The well-known problem is thoroughly and completely solved.

Abstract:

Key words: General region semiconductor device;3-dimensional heat conduction, char-
acteristic finite difference, parallel fractional steps, l2 error estimate.

中图分类号:

65M15

袁益让. FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE[J]. 数学物理学报(英文版), 2005, 25(3): 427-438.

Yuan-Yi-Rang. FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE[J]. Acta mathematica scientia,Series B, 2005, 25(3): 427-438.

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FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

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