数学物理学报(英文版) ›› 1983, Vol. 3 ›› Issue (2): 141-151.
朱子浩
Zhu Zihao
摘要: Results of computer simulation of the anodization and strip method of ion implantation profiling of silicon are given for the following eases:phosphor dosage from 1012/cm2 to 1014/cm2 and boron dosage from 1012/cm2 to 1013/cm2. particular emphasis is placed on the effect of surface states and substrate PN junction on the stripping algorithm. When phosphor dosage below 1013/cm2 or boron dosage below 1012/cm2 is used, the profile obtained by the stripping method deviates significantly from the true profile. It is shown that attempt to estimate this deviation by the surface depletion width mar be erroneous.