数学物理学报(英文版) ›› 2011, Vol. 31 ›› Issue (3): 960-968.doi: 10.1016/S0252-9602(11)60289-0

• 论文 • 上一篇    下一篇

EXISTENCE OF WEAK SOLUTIONS TO A DEGENERATE STEAD-STATE SEMICONDUCTOR EQUATIONS

吴斌   

  1. College of Mathematics and Physics, Nanjing University of Information Science and Technology, Nanjing 210044, China
  • 收稿日期:2009-06-12 修回日期:2010-01-20 出版日期:2011-05-20 发布日期:2011-05-20
  • 基金资助:

    This work was supported by  NSFC (40906048),  the Tianyuan Foundation of Mathematics (11026211), the Natural Science Foundation of the Jiangsu Higher Education Institutions (09KJB110005), and the Science Research Foundation of NUIST (20080295).

EXISTENCE OF WEAK SOLUTIONS TO A DEGENERATE STEAD-STATE SEMICONDUCTOR EQUATIONS

WU Bin   

  1. College of Mathematics and Physics, Nanjing University of Information Science and Technology, Nanjing 210044, China
  • Received:2009-06-12 Revised:2010-01-20 Online:2011-05-20 Published:2011-05-20
  • Supported by:

    This work was supported by  NSFC (40906048),  the Tianyuan Foundation of Mathematics (11026211), the Natural Science Foundation of the Jiangsu Higher Education Institutions (09KJB110005), and the Science Research Foundation of NUIST (20080295).

摘要:

In this paper, we consider a degenerate steady-state drift-diffusion model for semiconductors. The pressure function used in this paper is φ(s)=sα~(α>1). We present existence results for general nonlinear diffusivities for the degenerate Dirichlet-Neumann mixed boundary value problem.

关键词: steady-state, degenerate semiconductor equations, drift-diffusion model

Abstract:

In this paper, we consider a degenerate steady-state drift-diffusion model for semiconductors. The pressure function used in this paper is φ(s)=sα~(α>1). We present existence results for general nonlinear diffusivities for the degenerate Dirichlet-Neumann mixed boundary value problem.

Key words: steady-state, degenerate semiconductor equations, drift-diffusion model

中图分类号: 

  • 35A01