波谱学杂志

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纳米GaP材料Ga填隙缺陷的EPR实验观察

张兆春, 邹陆军, 崔得良   

  1. 上海大学材料科学与工程学院,上海 200072; 山东大学晶体材料研究所,山东济南 250100
  • 收稿日期:2003-03-14 修回日期:2003-05-21 出版日期:2003-12-05 发布日期:2003-12-05
  • 作者简介:张兆春(1963),男,山东惠民人,博士后,副教授,纳米半导体材料物理化学,E-mail:zhczhang@mail.shu.edu.cn, 电话:(021)69982436.
  • 基金资助:

    上海市高等学校科学技术发展基金资助项目(01A23).

EXPERIMENT OBSERVATION OF Ga SELF INTERSTITIAL DEFECT OF  GaP NANOCRYSTALS BY ELECTRON PARAMAGNETIC RESONANCE

ZHANG Zhao-chun, ZOU Lu-jun, CUI De-liang   

  1. School of Materials Science and Technology, Shanghai University, Shanghai 200072, China; Institute of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2003-03-14 Revised:2003-05-21 Online:2003-12-05 Published:2003-12-05
  • Supported by:

    上海市高等学校科学技术发展基金资助项目(01A23).

摘要:

利用电子顺磁共振(EPR)技术对纳米GaP粉体材料的本征点缺陷进行了研究,结果表明:由EPR信息的g因子值(2.0027±0.0004)可以确定纳米GaP粉体材料存在Ga自填隙(Gai)本征缺陷;纳米GaP粉体EPR信号超精细结构消失,以及谱线线宽(ΔHPP)变窄等实验现象,可能是由纳米材料界面的无序性,以及缺陷原子和界面原子之间的电子交换造成的;在较低的测试温度范围内,升高温度引起纳米GaP材料发生晶界结构弛豫;当测试温度由100 K升高至423 K时,ΔHPP值和自由基浓度皆逐渐降低.

关键词: 电子顺磁共振, 纳米, GaP, 点缺陷

Abstract:

The intrinsic point defects of GaP nanocrystals were investigated by electron paramagnetic resonance (EPR). The g value of GaP nanocrystals EPR si
gnal observed was 2.0027±0.0004, suggesting the existence of Ga self-interstitial defect. Collapse of hyperfine splitting and narrowing of peak-to-peak linewidth (ΔHPP) were observed, probably resulting from interface disorders and rapid electron exchange between the defect atoms and the interface atoms. In lower measuring temperature range, increase of temperature led to occurrence of grain boundary relaxation of GaP nanocrystals. The value of both ΔHPP and concentration of dangling bound decrease as the measuring temperature increased from 100 K to 423 K.

Key words: EPR, nanometer, GaP, point defect

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